Internship - Characterization team

behavior of early-generation Silicon Carbide (SiC) device samples-critical components in high-efficiency power systems. Hands... environment. Conduct static measurements (e.g., Vth, RDS(on), Vf) using power device curve tracers. Execute dynamic...

Lugar: München, Bayern | 03/10/2025 00:10:40 AM | Salario: S/. No Especificado | Empresa: onsemi

Internship - Characterization team

behavior of early-generation Silicon Carbide (SiC) device samples-critical components in high-efficiency power systems. Hands... environment. Conduct static measurements (e.g., Vth, RDS(on), Vf) using power device curve tracers. Execute dynamic...

Lugar: München, Bayern | 01/10/2025 19:10:44 PM | Salario: S/. No Especificado | Empresa: onsemi