Module RF and Mixed-Signal Designer

successful candidate will be responsible for leading the technical design and development of RF/microwave modules containing GaAs- and GaN... Experience with internal / external customers Experience with GaAs and / or GaN MMIC devices What We Offer: Our values...

Lugar: Andover, MA | 26/10/2024 00:10:08 AM | Salario: S/. $96000 - 200000 per year | Empresa: Raytheon Technologies

Process Engineer

.D preferred. The position is intended for a split week coverage, including partial weekend. Experience with GaN material growth...

Lugar: Branchburg, NJ | 26/10/2024 00:10:26 AM | Salario: S/. No Especificado | Empresa: Power Integrations

Sr. Module RF and Mixed-Signal Designer

successful candidate will be responsible for leading the technical design and development of RF/microwave modules containing GaAs- and GaN... Experience with internal / external customers Experience with GaAs and / or GaN MMIC devices What We Offer: Our values...

Lugar: Andover, MA | 25/10/2024 22:10:17 PM | Salario: S/. No Especificado | Empresa: Raytheon Technologies

Technology Development Intern

of the team the candidate will be working on projects related to GaN power transistors, GaAs and GaN MMICs, and a variety...

Lugar: Lowell, MA | 25/10/2024 19:10:59 PM | Salario: S/. No Especificado | Empresa: MACOM

Process Development Engineer

facility supporting BAW, GaAs, and GaN Qorvo Technologies. Position requires working Tuesday-Saturday 2pm to 11pm schedule...

Lugar: Richardson, TX | 24/10/2024 21:10:27 PM | Salario: S/. No Especificado | Empresa: Qorvo

RF Power Amplifier Development Intern

be tasked with device characterization of MACOM's high power GaN transistor products geared towards, Multi Market, Base Station..., RF GaN devices, biasing devices, capturing accurate RF data and performing a limited amount of data processing...

Lugar: Mesa, AZ | 24/10/2024 02:10:48 AM | Salario: S/. No Especificado | Empresa: MACOM