is seeking an experienced RF Amplifier Design Engineer to design and develop RF power amplifier modules using GaN transistor... using GaN devices). Perform circuit simulations using ADS or Microwave Office. Lead development, optimization, and testing...
level. Experience in any one of the following: Familiarity with wide bandgap devices (SiC, GaN) in power electronics...
for the RFIC subsystems and circuits Develop analog/mixed-signal/RF/microwave circuits in SiGe, GaAs, GaN, or CMOS processes...
Lugar:
USA | 07/03/2026 18:03:51 PM | Salario: S/. No Especificado | Empresa:
SpaceX for the RFIC subsystems and circuits Develop analog/mixed-signal/RF/microwave circuits in SiGe, GaAs, GaN, or CMOS processes...
Lugar:
USA | 07/03/2026 18:03:40 PM | Salario: S/. $125000 - 145000 per year | Empresa:
SpaceX to have are the following: Defense/aerospace background, experience with wide bandgap devices (SiC, GaN), hands-on magnetics...
to have are the following: Defense/aerospace background, experience with wide bandgap devices (SiC, GaN), hands-on magnetics...
, including a wide portfolio of Power MOSFET, IGBT, IPM, TVS, GaN/SiC, Power IC and Digital Power products...
, including a wide portfolio of Power MOSFET, IGBT, IPM, TVS, GaN/SiC, Power IC and Digital Power products...
: Develop and optimize novel solutions to GaN challenges for the next generations of onsemi Power devices. This includes taking... and foundries to drive GaN process/device development and evaluation, device performance improvement, FE-BE integration, CIP, yield...
Lugar:
San Jose, CA | 04/03/2026 01:03:00 AM | Salario: S/. No Especificado | Empresa:
onsemi, including a wide portfolio of Power MOSFET, IGBT, IPM, TVS, GaN/SiC, Power IC and Digital Power products...