RF Engineer-Defense & High Power-onsite

is seeking an experienced RF Amplifier Design Engineer to design and develop RF power amplifier modules using GaN transistor... using GaN devices). Perform circuit simulations using ADS or Microwave Office. Lead development, optimization, and testing...

Lugar: Hanover Park, IL | 10/03/2026 20:03:21 PM | Salario: S/. $90000 per year | Empresa: Michael Page

Sr. RFIC Engineer

for the RFIC subsystems and circuits Develop analog/mixed-signal/RF/microwave circuits in SiGe, GaAs, GaN, or CMOS processes...

Lugar: USA | 07/03/2026 18:03:51 PM | Salario: S/. No Especificado | Empresa: SpaceX

RFIC Engineer (Starshield Silicon)

for the RFIC subsystems and circuits Develop analog/mixed-signal/RF/microwave circuits in SiGe, GaAs, GaN, or CMOS processes...

Lugar: USA | 07/03/2026 18:03:40 PM | Salario: S/. $125000 - 145000 per year | Empresa: SpaceX

FE External Manufacturing Foundry Lead Engineer

: Develop and optimize novel solutions to GaN challenges for the next generations of onsemi Power devices. This includes taking... and foundries to drive GaN process/device development and evaluation, device performance improvement, FE-BE integration, CIP, yield...

Lugar: San Jose, CA | 04/03/2026 01:03:00 AM | Salario: S/. No Especificado | Empresa: onsemi