Technical Director
manufacturing, integrating multiple die technologies (GaAs, GaN, SOI, SiGe, CMOS) into system-in-package solutions Develop...
Lugar: Irvine, CA | 27/02/2026 18:02:32 PM | Salario: S/. No Especificado | Empresa: Skyworks
Senior Director Datacenter Power Systems
topologies and design principles, as well as power devices (Si, SiC, GaN), analog and digital ICs, including MCUs. Travel...
Lugar: El Segundo, CA | 26/02/2026 21:02:59 PM | Salario: S/. No Especificado | Empresa: Infineon
Senior Staff Product Engineer
, including a wide portfolio of Power MOSFET, IGBT, IPM, TVS, GaN/SiC, Power IC and Digital Power products...
Lugar: Sunnyvale, CA | 26/02/2026 18:02:00 PM | Salario: S/. $150000 - 190000 per year | Empresa: Alpha & Omega Semiconductor
Principal Engineer, Power Electronics
technologies (GaN/SiC). Experience with mixed signal analog/digital system design. What Makes You Eligible Be willing...
Lugar: Richardson, TX | 26/02/2026 03:02:11 AM | Salario: S/. $125250 - 183700 per year | Empresa: Harman
Retail Manager
Position Overview Now Hiring: Retail Manager GAN Enterprises Fulltime: nonexempt/Hourly Pay Rate: $65k - $85k...
Lugar: Mineola, NY | 25/02/2026 22:02:18 PM | Salario: S/. $65000 - 85000 per year | Empresa: PuzzleHR
Principal RF Design Engineer
and GaN processes and has successfully taken designs from prototype through production. This is an ideal position.... Job Responsibilities: Design RF monolithic microwave integrated circuit components on GaAs and GaN processes Uses RF simulation tools...
Lugar: Georgia | 22/02/2026 00:02:34 AM | Salario: S/. No Especificado | Empresa: Mercury Systems
Senior Applications Engineer
knowledge of GaN and GaAs RF/Microwave semiconductors for discrete and MMIC power amplifiers, LNA, phase shifters, limiters...
Lugar: Richardson, TX | 19/02/2026 23:02:33 PM | Salario: S/. No Especificado | Empresa: Qorvo
R&D Pulse Power Engineer (Senior - Principal) Sperry Drilling
capacitors, pulse-rated resistors, HV diodes, high-speed switches (SiC/GaN, IGBT/MOSFET), triggered devices, connectors, cables..., SiC, GaN, triggered devices), including protection and dv/dt/di/dt control. Proven ability to build and operate high...
Lugar: Houston, TX | 19/02/2026 02:02:35 AM | Salario: S/. No Especificado | Empresa: Halliburton
R&D Pulse Power Engineer (Senior - Principal) Sperry Drilling
capacitors, pulse-rated resistors, HV diodes, high-speed switches (SiC/GaN, IGBT/MOSFET), triggered devices, connectors, cables..., SiC, GaN, triggered devices), including protection and dv/dt/di/dt control. Proven ability to build and operate high...
Lugar: Houston, TX | 18/02/2026 18:02:03 PM | Salario: S/. No Especificado | Empresa: Halliburton
Business Development, A.I. Data Center
understanding of power electronics and wide-bandgap (SiC/GaN) technologies;ability to communicate technical value propositions...
Lugar: Durham, NC | 17/02/2026 21:02:19 PM | Salario: S/. No Especificado | Empresa: Wolfspeed