Technology Development Intern

of the team the candidate will be working on projects related to GaN power transistors, GaAs and GaN MMICs, and a variety...

Lugar: Lowell, MA | 25/10/2024 19:10:59 PM | Salario: S/. No Especificado | Empresa: MACOM

RF Power Amplifier Development Intern

be tasked with device characterization of MACOM's high power GaN transistor products geared towards, Multi Market, Base Station..., RF GaN devices, biasing devices, capturing accurate RF data and performing a limited amount of data processing...

Lugar: Mesa, AZ | 24/10/2024 02:10:48 AM | Salario: S/. No Especificado | Empresa: MACOM

Device Modeling Intern

-edge RF device models for Qorvo's GaN & GaAs technologies. This will involve fitting Linear and Nonlinear device models... Models in Qorvo's GaN & GaAs technologies. Develop and maintain design guides, tutorials, and examples for the design...

Lugar: Richardson, TX | 20/09/2024 23:09:34 PM | Salario: S/. No Especificado | Empresa: Qorvo