Device and Process Development Intern

of the next-generation GaN RF devices. The Device and Process Development, Intern will perform process development, device DC... and their characterization, including DC and RF Exposure of GaN or GaAs processing and device preferred Semiconductor coursework...

Lugar: Richardson, TX | 20/09/2024 22:09:29 PM | Salario: S/. No Especificado | Empresa: Qorvo

Device and Process Development Intern

of the next-generation GaN RF devices. The Device and Process Development, Intern will perform process development, device DC... and their characterization, including DC and RF Exposure of GaN or GaAs processing and device preferred Semiconductor coursework...

Lugar: Richardson, TX | 20/09/2024 21:09:32 PM | Salario: S/. No Especificado | Empresa: Qorvo

Process Engineering Intern

, and Connectivity and Sensors business groups. The positions will span the range of technologies from BAW, SAW, GaAs, GaN and sensor...

Lugar: Greensboro, NC | 18/09/2024 02:09:53 AM | Salario: S/. No Especificado | Empresa: Qorvo

Process Engineering Intern

, and Connectivity and Sensors business groups. The positions will span the range of technologies from BAW, SAW, GaAs, GaN and sensor...

Lugar: Greensboro, NC | 17/09/2024 17:09:23 PM | Salario: S/. No Especificado | Empresa: Qorvo