CLAWS III-N RF Integration Engineer

Responsibilities RF Device Design and Development (30%) Design and optimize GaN RF devices including discrete HEMTs, passive... and Fabrication (30%) Be responsible for process development and integration enabling the fabrication of GaN devices leveraging...

Lugar: Raleigh, NC | 25/03/2026 20:03:51 PM | Salario: S/. No Especificado | Empresa: North Carolina State University

Head of Datacenter & Compute Business Unit

innovation in: GaN-based power architectures High-frequency switching platforms Digital control and system-level..., or cloud infrastructure providers. Background in GaN, SiC, digital power, or advanced packaging technologies. Familiarity...

Lugar: San Jose, CA | 25/03/2026 01:03:52 AM | Salario: S/. No Especificado | Empresa: Power Integrations

Principal Modeling Engineer

design across the breadth of MACOM's product portfolio - GaAs, GaN and Si based semiconductor ICs and modules. The individual.... Specific Responsibilities: Development of active device models for GaAs, GaN, and Si based FET and diode devices Creation...

Lugar: Lowell, MA | 24/03/2026 23:03:41 PM | Salario: S/. $120000 - 170000 per year | Empresa: MACOM