Microwave Electronics Design Engineer, High Power Amplifiers

(SSPA, GaN, GaAs, or TWT-based as applicable). Perform nonlinear circuit design, load-pull analysis, and efficiency... amplifier theory and nonlinear RF design. Hands-on experience with high-power devices (e.g., GaN HEMTs). Proficiency with RF...

Lugar: Santa Barbara, CA | 13/02/2026 18:02:06 PM | Salario: S/. $150000 - 200000 per year | Empresa: Umbra

Principal Motion System Engineer - Robotics

. You’ll set the direction for high-performance robotic BLDC/PMSM drive hardware, power electronics (including GaN FET-based..., advanced power electronics (including GaN), and sensors. Lead the hardware/firmware co-design for high-performance actuation...

Lugar: Wilmington, MA | 13/02/2026 02:02:18 AM | Salario: S/. No Especificado | Empresa: Analog Devices

Electrical Engineer II

/Simulink, LTSpice, PLECS, and ANSYS, and supports designs using wide bandgap devices (SiC, GaN), conventional magnetics.... Experience with wide-band gap devices (GaN, SiC) and gate drive. EMI/EMC knowledge and design considerations. Controls...

Lugar: Logan, UT | 13/02/2026 00:02:03 AM | Salario: S/. No Especificado | Empresa: Utah State University

Electrical Engineer II

/Simulink, LTSpice, PLECS, and ANSYS, and supports designs using wide bandgap devices (SiC, GaN), conventional magnetics.... Experience with wide-band gap devices (GaN, SiC) and gate drive. EMI/EMC knowledge and design considerations. Controls...

Lugar: Logan, UT | 12/02/2026 18:02:25 PM | Salario: S/. No Especificado | Empresa: Utah State University

Test Engineer, Principal

. Extensive experience in testing one or more of the following device types: GaAs pHEMT, GaN HEMT, RF MOSFET, PIN diode, Schottky...

Lugar: Lowell, MA | 10/02/2026 22:02:15 PM | Salario: S/. $97900 - 166700 per year | Empresa: MACOM

Principal Power Management Apps Engineer

to learn how our innovative team is helping connect, protect and power our planet. Applications Engineer - RF GaN Biasing... Engineer to support our next-generation RF GaN and GaAs biasing ICs used in radar, SATCOM, and high-performance communication...

Lugar: Richardson, TX | 10/02/2026 21:02:57 PM | Salario: S/. No Especificado | Empresa: Qorvo

Electrical Engineer III

‑bandgap devices (SiC, GaN), gate drives, magnetics (inductors and transformers), and EMI/EMC design considerations, and works..., 3-level and multi-port converters Strongly Preferred: experience with wide-band gap devices (GaN, SiC) and gate drive...

Lugar: Logan, UT | 10/02/2026 02:02:58 AM | Salario: S/. No Especificado | Empresa: Utah State University