(SSPA, GaN, GaAs, or TWT-based as applicable). Perform nonlinear circuit design, load-pull analysis, and efficiency... amplifier theory and nonlinear RF design. Hands-on experience with high-power devices (e.g., GaN HEMTs). Proficiency with RF...
in generative algorithms (e.g., GAN, VAE, etc.) as well as pre-trained models (e.g., LLaMa, SAM, etc.) Experience developing models...
+ years in test development, focusing on power electronics (MOSFETs, SiC, GaN), analog, and mixed-signal circuits. Software...
. You’ll set the direction for high-performance robotic BLDC/PMSM drive hardware, power electronics (including GaN FET-based..., advanced power electronics (including GaN), and sensors. Lead the hardware/firmware co-design for high-performance actuation...
/Simulink, LTSpice, PLECS, and ANSYS, and supports designs using wide bandgap devices (SiC, GaN), conventional magnetics.... Experience with wide-band gap devices (GaN, SiC) and gate drive. EMI/EMC knowledge and design considerations. Controls...
/Simulink, LTSpice, PLECS, and ANSYS, and supports designs using wide bandgap devices (SiC, GaN), conventional magnetics.... Experience with wide-band gap devices (GaN, SiC) and gate drive. EMI/EMC knowledge and design considerations. Controls...
Analyzers (RSAs), Vector Network Analyzers (VNAs) and Performance Network Analyzer (PNAs) Experience with GaAs and/or GaN MMIC...
. Extensive experience in testing one or more of the following device types: GaAs pHEMT, GaN HEMT, RF MOSFET, PIN diode, Schottky...
Lugar:
Lowell, MA | 10/02/2026 22:02:15 PM | Salario: S/. $97900 - 166700 per year | Empresa:
MACOM to learn how our innovative team is helping connect, protect and power our planet. Applications Engineer - RF GaN Biasing... Engineer to support our next-generation RF GaN and GaAs biasing ICs used in radar, SATCOM, and high-performance communication...
‑bandgap devices (SiC, GaN), gate drives, magnetics (inductors and transformers), and EMI/EMC design considerations, and works..., 3-level and multi-port converters Strongly Preferred: experience with wide-band gap devices (GaN, SiC) and gate drive...