National Security Solutions (NSS) Thin Film Growth Internship

-Organic Chemical Vapor Deposition (MOCVD) growth of β-Ga2O3 and GaN for high-power and radio frequency electronic applications...: Materials Growth: grow β-Ga2O3 and GaN semiconductor materials using MOCVD Materials Characterization: measure and analyze key...

Lugar: Beavercreek, OH | 11/03/2026 18:03:19 PM | Salario: S/. No Especificado | Empresa: KBR

RF Engineer-Defense & High Power-onsite

is seeking an experienced RF Amplifier Design Engineer to design and develop RF power amplifier modules using GaN transistor... using GaN devices). Perform circuit simulations using ADS or Microwave Office. Lead development, optimization, and testing...

Lugar: Hanover Park, IL | 10/03/2026 20:03:21 PM | Salario: S/. $90000 per year | Empresa: Michael Page

Sr. RFIC Engineer

for the RFIC subsystems and circuits Develop analog/mixed-signal/RF/microwave circuits in SiGe, GaAs, GaN, or CMOS processes...

Lugar: USA | 07/03/2026 18:03:51 PM | Salario: S/. No Especificado | Empresa: SpaceX

RFIC Engineer (Starshield Silicon)

for the RFIC subsystems and circuits Develop analog/mixed-signal/RF/microwave circuits in SiGe, GaAs, GaN, or CMOS processes...

Lugar: USA | 07/03/2026 18:03:40 PM | Salario: S/. $125000 - 145000 per year | Empresa: SpaceX