RF Power Amplifier Designer

technologies such as GaAs, GaN, SOI, or SiGe. Conduct lab testing and characterization of highly integrated RF System in Package..., bias, and architecture considerations. IC tape out experience in Silicon, GaAs HBT, GaN, or other relevant semiconductor...

Lugar: Andover, MA | 23/01/2026 18:01:00 PM | Salario: S/. $114400 - 220200 per year | Empresa: Skyworks

RF Power Amplifier Designer

for wireless applications using technologies such as GaAs, GaN, SOI, or SiGe. Conduct lab testing and characterization of highly... modes of operation, matching, bias, and architecture considerations. IC tape out experience in Silicon, GaAs HBT, GaN...

Lugar: Andover, MA | 23/01/2026 18:01:08 PM | Salario: S/. $114400 - 220200 per year | Empresa: Skyworks

Principal GaN Product Engineer

, including a wide portfolio of Power MOSFET, IGBT, IPM, TVS, GaN/SiC, Power IC and Digital Power products... job opportunity below to POWER your career! Primary Job Duties: SiC & GaN project management Track project schedules using...

Lugar: Sunnyvale, CA | 09/02/2026 18:02:46 PM | Salario: S/. $170000 - 220000 per year | Empresa: Alpha & Omega Semiconductor

Microwave Electronics Design Engineer, High Power Amplifiers

(SSPA, GaN, GaAs, or TWT-based as applicable). Perform nonlinear circuit design, load-pull analysis, and efficiency... amplifier theory and nonlinear RF design. Hands-on experience with high-power devices (e.g., GaN HEMTs). Proficiency with RF...

Lugar: Reston, VA | 13/02/2026 18:02:16 PM | Salario: S/. $150000 - 200000 per year | Empresa: Umbra

Microwave Electronics Design Engineer, High Power Amplifiers

(SSPA, GaN, GaAs, or TWT-based as applicable). Perform nonlinear circuit design, load-pull analysis, and efficiency... amplifier theory and nonlinear RF design. Hands-on experience with high-power devices (e.g., GaN HEMTs). Proficiency with RF...

Lugar: Arlington, VA | 13/02/2026 18:02:38 PM | Salario: S/. $150000 - 200000 per year | Empresa: Umbra

Microwave Electronics Design Engineer, High Power Amplifiers

(SSPA, GaN, GaAs, or TWT-based as applicable). Perform nonlinear circuit design, load-pull analysis, and efficiency... amplifier theory and nonlinear RF design. Hands-on experience with high-power devices (e.g., GaN HEMTs). Proficiency with RF...

Lugar: Santa Barbara, CA | 13/02/2026 18:02:06 PM | Salario: S/. $150000 - 200000 per year | Empresa: Umbra

Power Electronics Research Engineer

components to SiP solutions to minimize parasitic inductance and optimize the commutation loop for Wide Bandgap (SiC/GaN) devices...

Lugar: Dearborn, MI | 17/01/2026 18:01:24 PM | Salario: S/. $113580 - 190500 per year | Empresa: Ford