technologies such as GaAs, GaN, SOI, or SiGe. Conduct lab testing and characterization of highly integrated RF System in Package..., bias, and architecture considerations. IC tape out experience in Silicon, GaAs HBT, GaN, or other relevant semiconductor...
Lugar:
Andover, MA | 23/01/2026 18:01:00 PM | Salario: S/. $114400 - 220200 per year | Empresa:
Skyworks for wireless applications using technologies such as GaAs, GaN, SOI, or SiGe. Conduct lab testing and characterization of highly... modes of operation, matching, bias, and architecture considerations. IC tape out experience in Silicon, GaAs HBT, GaN...
Lugar:
Andover, MA | 23/01/2026 18:01:08 PM | Salario: S/. $114400 - 220200 per year | Empresa:
Skyworks, including a wide portfolio of Power MOSFET, IGBT, IPM, TVS, GaN/SiC, Power IC and Digital Power products... job opportunity below to POWER your career! Primary Job Duties: SiC & GaN project management Track project schedules using...
(SSPA, GaN, GaAs, or TWT-based as applicable). Perform nonlinear circuit design, load-pull analysis, and efficiency... amplifier theory and nonlinear RF design. Hands-on experience with high-power devices (e.g., GaN HEMTs). Proficiency with RF...
Lugar:
Reston, VA | 13/02/2026 18:02:16 PM | Salario: S/. $150000 - 200000 per year | Empresa:
Umbra (SSPA, GaN, GaAs, or TWT-based as applicable). Perform nonlinear circuit design, load-pull analysis, and efficiency... amplifier theory and nonlinear RF design. Hands-on experience with high-power devices (e.g., GaN HEMTs). Proficiency with RF...
Lugar:
Arlington, VA | 13/02/2026 18:02:38 PM | Salario: S/. $150000 - 200000 per year | Empresa:
Umbra (SSPA, GaN, GaAs, or TWT-based as applicable). Perform nonlinear circuit design, load-pull analysis, and efficiency... amplifier theory and nonlinear RF design. Hands-on experience with high-power devices (e.g., GaN HEMTs). Proficiency with RF...
Bargaining unit status Announcement number 26-GAN-12918832-AUSA Control number 862239300 This job is open...
components to SiP solutions to minimize parasitic inductance and optimize the commutation loop for Wide Bandgap (SiC/GaN) devices...
Lugar:
Dearborn, MI | 17/01/2026 18:01:24 PM | Salario: S/. $113580 - 190500 per year | Empresa:
Ford, including a wide portfolio of Power MOSFET, IGBT, IPM, TVS, GaN/SiC, Power IC and Digital Power products...
, including a wide portfolio of Power MOSFET, IGBT, IPM, TVS, GaN/SiC, Power IC and Digital Power products...