Sr Principal GaN Scientist
advanced device technologies, particularly GaN, with complementary expertise in GaAs, InP, and other compound semiconductors...
Lugar: Richardson, TX | 30/01/2026 00:01:44 AM | Salario: S/. No Especificado | Empresa: Qorvo
Experienced RF GaN Technology Development SMTS Process Integration Engineer
. Essential Responsibilities: This position offers the unique opportunity to develop innovative RF GaN technologies as a Process... position). Must be able to work in the United States. Preferred Qualifications: 8+ Years of Experience in GaN / Wide...
Lugar: Essex Junction, VT | 14/01/2026 02:01:22 AM | Salario: S/. No Especificado | Empresa: GlobalFoundries
ManagerSr. Manager - Regulatory Affairs
Summary This position reports to the Functional Area Head, Global Regulatory Affairs. The incumbent responsible for supporting the development and implementation of regulatory strategies, work closely with the cross functional asset teams...
Lugar: Bridgewater, NJ | 06/01/2026 22:01:31 PM | Salario: S/. No Especificado | Empresa: Gan & Lee Pharmaceuticals
Senior Principal Engineer - High Voltage Engineering
conversion, wide bandgap (WBG) semiconductor devices (SiC, GaN), advanced dielectric materials, partial discharge diagnostics...
Lugar: Niskayuna, NY | 26/03/2026 22:03:49 PM | Salario: S/. No Especificado | Empresa: GE Vernova
Principal Engineer, RF Power Amplifier Architect
in at least multiple technology nodes including: GaAs HBT, CMOS-SOI, SiGe, GaN Understanding of the comparative advantage...
Lugar: Arlington Heights, IL | 26/03/2026 21:03:43 PM | Salario: S/. No Especificado | Empresa: Murata
Principal Engineer, RF Power Amplifier Architect
in at least multiple technology nodes including: GaAs HBT, CMOS-SOI, SiGe, GaN Understanding of the comparative advantage...
Lugar: Arlington Heights, IL | 26/03/2026 18:03:03 PM | Salario: S/. No Especificado | Empresa: Murata
Power Electronic Engineer - PSSD
of switching devices such as IGBTs, SiC MOSFETs, or GaN transistors, ensuring compatibility with high-power applications. Optimize...
Lugar: Hampton, GA | 25/03/2026 23:03:26 PM | Salario: S/. No Especificado | Empresa: Southern States, LLC
CLAWS Electronics Test Engineer
a highly skilled Test Engineer to join our team and contribute to the development of next-generation GaN semiconductor devices...
Lugar: Raleigh, NC | 25/03/2026 20:03:37 PM | Salario: S/. No Especificado | Empresa: North Carolina State University
CLAWS III-N RF Integration Engineer
Responsibilities RF Device Design and Development (30%) Design and optimize GaN RF devices including discrete HEMTs, passive... and Fabrication (30%) Be responsible for process development and integration enabling the fabrication of GaN devices leveraging...
Lugar: Raleigh, NC | 25/03/2026 20:03:51 PM | Salario: S/. No Especificado | Empresa: North Carolina State University
Head of Datacenter & Compute Business Unit
innovation in: GaN-based power architectures High-frequency switching platforms Digital control and system-level..., or cloud infrastructure providers. Background in GaN, SiC, digital power, or advanced packaging technologies. Familiarity...
Lugar: San Jose, CA | 25/03/2026 01:03:52 AM | Salario: S/. No Especificado | Empresa: Power Integrations