Principal Modeling Engineer

design across the breadth of MACOM's product portfolio - GaAs, GaN and Si based semiconductor ICs and modules. The individual.... Specific Responsibilities: Development of active device models for GaAs, GaN, and Si based FET and diode devices Creation...

Lugar: Lowell, MA | 24/03/2026 23:03:41 PM | Salario: S/. $120000 - 170000 per year | Empresa: MACOM

Staff Equipment Engineer-Photo

Nitride (GaN) technology to join the team. Our technology enables the next generation of power conversion, accelerating the... next-generation GaN-based devices. Responsibilities: Develop, qualify, and sustain photolithography equipment for vertical GaN...

Lugar: Syracuse, NY | 15/01/2026 02:01:19 AM | Salario: S/. $98700 - 167700 per year | Empresa: onsemi

Test Engineer, Principal

. Extensive experience in testing one or more of the following device types: GaAs pHEMT, GaN HEMT, RF MOSFET, PIN diode, Schottky...

Lugar: Lowell, MA | 10/02/2026 22:02:15 PM | Salario: S/. $97900 - 166700 per year | Empresa: MACOM

Principal MMIC Design Engineer

based on GaN and GaAs technologies. - MMIC products may include power amplifiers, distributed amplifiers, low noise...

Lugar: Lowell, MA | 19/03/2026 03:03:25 AM | Salario: S/. $97000 - 166000 per year | Empresa: MACOM

Principal MMIC Design Engineer

based on GaN and GaAs technologies. - MMIC products may include power amplifiers, distributed amplifiers, low noise...

Lugar: Lowell, MA | 19/03/2026 00:03:02 AM | Salario: S/. $97000 - 166000 per year | Empresa: MACOM