RF Power Amplifier Designer

technologies such as GaAs, GaN, SOI, or SiGe. Conduct lab testing and characterization of highly integrated RF System in Package..., bias, and architecture considerations. IC tape out experience in Silicon, GaAs HBT, GaN, or other relevant semiconductor...

Lugar: Andover, MA | 23/01/2026 18:01:00 PM | Salario: S/. $114400 - 220200 per year | Empresa: Skyworks

RF Power Amplifier Designer

for wireless applications using technologies such as GaAs, GaN, SOI, or SiGe. Conduct lab testing and characterization of highly... modes of operation, matching, bias, and architecture considerations. IC tape out experience in Silicon, GaAs HBT, GaN...

Lugar: Andover, MA | 23/01/2026 18:01:08 PM | Salario: S/. $114400 - 220200 per year | Empresa: Skyworks

Research Science Engineering

technologies, including wide-band-gap materials like Gallium Nitride (GaN) for high-performance power applications. The role... testing. Experience with GaN technology is a plus. Why You'll Love Working Here At Analog Devices, you'll be part...

Lugar: Wilmington, MA | 20/01/2026 18:01:05 PM | Salario: S/. $86400 - 118800 per year | Empresa: Analog Devices

Power Electronics Research Engineer

to minimize parasitic inductance and optimize the commutation loop for Wide Bandgap (SiC/GaN) devices. BCD Process Evaluation...

Lugar: Dearborn, MI | 17/01/2026 21:01:30 PM | Salario: S/. No Especificado | Empresa: Ford