Power Discrete Electronics Engineer

using discrete semiconductor devices including MOSFETs, IGBTs, GaN devices, diodes, rectifiers, and other power switching... design MOSFETs, IGBTs, GaN devices, power diodes, rectifiers, and switching devices Switching power supply design AC-DC...

Lugar: Murphy, NC | 10/09/2026 21:09:58 PM | Salario: S/. No Especificado | Empresa: AEGIS POWER SYSTEMS, INC.

Jr Power Electronics Engineer

(SiC, GaN) is highly desirable Exposure to FPGA-based control implementations and VHDL programming is a plus Proactive...

Lugar: Syracuse, NY | 10/09/2026 20:09:50 PM | Salario: S/. $99900 - 149100 per year | Empresa: ITT Inc.

Sr Principal Electrical Engineer

our high-current BCD (Bipolar-CMOS-DMOS) and low-voltage GaN power process and product portfolios. This role owns test vehicle... and LV GaN process technologies, including device test structures, scaled power stages, and full-function demonstration...

Lugar: San Jose, CA | 10/09/2026 17:09:42 PM | Salario: S/. No Especificado | Empresa: Renesas Electronics

Power Discrete Electronics Engineer

using discrete semiconductor devices including MOSFETs, IGBTs, GaN devices, diodes, rectifiers, and other power switching... design MOSFETs, IGBTs, GaN devices, power diodes, rectifiers, and switching devices Switching power supply design AC-DC...

Lugar: Murphy, NC | 10/09/2026 17:09:03 PM | Salario: S/. No Especificado | Empresa: AEGIS POWER SYSTEMS, INC.