Power Electronics Research Engineer

components to SiP solutions to minimize parasitic inductance and optimize the commutation loop for Wide Bandgap (SiC/GaN) devices...

Lugar: Dearborn, MI | 17/01/2026 18:01:24 PM | Salario: S/. $113580 - 190500 per year | Empresa: Ford

Section Lead–Test and Inspection Semiconductor Fab

, with a preference for expertise in GaAs, GaN, GaSb, or acoustic devices, as well as proficiency in automated inspection and pick...: A Master’s degree or PhD. in a Science, Technology, Engineering & Math (STEM) Field Experience working with GaAs, GaN, GaSb...

Lugar: Andover, MA | 16/01/2026 19:01:13 PM | Salario: S/. No Especificado | Empresa: Raytheon Technologies

Power Electronics Engineer II

with control loop modeling and laboratory characterization Knowledge of power electronics applications utilizing GaN or SiC wide...

Lugar: El Segundo, CA | 15/01/2026 22:01:47 PM | Salario: S/. $105000 - 125000 per year | Empresa: CesiumAstro

Staff Equipment Engineer-Photo

Nitride (GaN) technology to join the team. Our technology enables the next generation of power conversion, accelerating the... next-generation GaN-based devices. Responsibilities: Develop, qualify, and sustain photolithography equipment for vertical GaN...

Lugar: Syracuse, NY | 15/01/2026 02:01:19 AM | Salario: S/. $98700 - 167700 per year | Empresa: onsemi

RF Engineer

in a cleanroom environment Familiarity with semiconductor devices like GaAs and GaN Strong communication skills Must be able...

Lugar: Hauppauge, NY | 14/01/2026 21:01:32 PM | Salario: S/. $100000 - 130000 per year | Empresa: Intra Management Solutions