Electrical Engineer III

‑bandgap devices (SiC, GaN), gate drives, magnetics (inductors and transformers), and EMI/EMC design considerations, and works..., 3-level and multi-port converters Strongly Preferred: experience with wide-band gap devices (GaN, SiC) and gate drive...

Lugar: Logan, UT | 10/02/2026 02:02:58 AM | Salario: S/. No Especificado | Empresa: Utah State University

Electrical Engineer III

-bandgap devices (SiC, GaN), gate drives, magnetics (inductors and transformers), and EMI/EMC design considerations, and works..., 3-level and multi-port converters Strongly Preferred: experience with wide-band gap devices (GaN, SiC) and gate drive...

Lugar: Logan, UT | 09/02/2026 03:02:22 AM | Salario: S/. No Especificado | Empresa: Utah State University